IRL1404ZPbF Datasheet | International Rectifier

Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. - 95446B IRL1404ZPb F IRL1404ZSPb F IRL1404ZLPb F HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.1mΩ ID = 120A TO-220AB D2Pak TO-262 IRL1404ZPb F IRL1404ZSPb F IRL1404ZLPb...