Click to expand full text
www.DataSheet4U.com
Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
HEXFET Power MOSFET
D
IRL2505LPbF IRL2505SPbF ®
VDSS = 55V RDS(on) = 0.008Ω
PD - 95577
G
ID = 104A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRL2505LPBF Datasheet
