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IRL2505SPBF - HEXFET Power MOSFET

Download the IRL2505SPBF datasheet PDF. This datasheet also covers the IRL2505LPBF variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL2505LPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRL2505S N-Channel MOSFET INCHANGE
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IRL2203N N-Channel MOSFET INCHANGE
IRL2203NL Power MOSFET FreesCale
IRL2203NS Power MOSFET FreesCale

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL2505S Power MOSFET
IRL2505 Power MOSFET
IRL2505L Power MOSFET
IRL2505LPBF HEXFET Power MOSFET
IRL2505PBF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL2505S) l Low-profile through-hole (IRL2505L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET Power MOSFET D IRL2505LPbF IRL2505SPbF ® VDSS = 55V RDS(on) = 0.008Ω PD - 95577 G ID = 104A† S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.