S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C .

because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. .

These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at min.

IRL3302

IRL3302PBF

IRL3302SPBF

IRL3303

IRL3303L

IRL3303LPBF

IRL3303PBF

IRL3303S

IRL3303SPBF

IRL3102

IRL3102PBF

IRL3102S

IRL3102SPBF