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IRL6297SDPBF Datasheet – Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile.

The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Overview

IRL6297SDPbF DirectFET® Dual N-Channel Power MOSFET ‚ Applications l Charge and Discharge Switch for Battery Application l Isolation Switch for Input Power or Battery Application Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 20V max ±12V max 3.8mΩ@4.5V 5.4mΩ@2.

Key Features

  • l Environmentaly Friendly Product Qg tot 27nC Qgd 9.5nC Qgs2 1.4nC Qrr 21nC Qoss 15nC Vgs(th) 0.80V l RoHs Compliant, Halogen Free l Dual Common-Drain N-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) GG DD SS Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SA DirectFET®.

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