IRL620SPBF - HEXFET Power MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRL620SPBF
Manufacturer	International Rectifier (now Infineon)
File Size	1.38 MB
Description	HEXFET Power MOSFET
Datasheet	IRL620SPBF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PD- 95591 IRL620SPbF Lead-Free www.DataSheet4U.com www.irf.com 1 07/21/04 IRL620SPbF 2 www.irf.com IRL620SPbF www.irf.com 3 IRL620SPbF 4 www.irf.com IRL620SPbF www.irf.com 5 IRL620SPbF 6 www.irf.com IRL620SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.