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IRL620 - Power MOSFET

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Logic-Level Gate Drive.
  • RDS(on) Specified at VGS = 4 V and 5 V.
  • Fast Switching Available RoHS.

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Datasheet Details

Part number IRL620
Manufacturer Vishay
File Size 1.83 MB
Description Power MOSFET
Datasheet download datasheet IRL620 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Power MOSFET IRL620, SiHL620 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 200 VGS = 5.0 V 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration Single 0.80 TO-220AB D S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • Fast Switching Available RoHS* COMPLIANT • Ease of paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.