| Part Number | IRL620 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 pa. ing Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 5.2 3.3 21 50 0.40 ±10 125 5.2 5.0 5. |
IRL620 Datasheet and Specifications PDF
The IRL620 is a POWER MOSFET.
| Part Number | IRL620 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
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IRL620
FEATURES
♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating.
* Logic-Level Gate Drive * Avalanche Rugged Technology * Rugged Gate Oxide Technology * Lower Input Capacitance * Improved Gate Charge * Extended Safe Operating Area * Lower Leakage Current: 10µA (Max.) @ VDS = 200V * Lower RDS(ON): 0.609Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS. |
| Part Number | IRL620 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is.
* Dynamic dV/dt Rating * Repetitive Avalanche Rated * Logic-Level Gate Drive * RDS(on) Specified at VGS = 4 V and 5 V * Fast Switching Available RoHS* COMPLIANT * Ease of paralleling * Simple Drive Requirements * Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs f. |