Description
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile.
Features
- l Environmentaly Friendly Product
Qg tot
27nC
Qgd
9.5nC
Qgs2
1.4nC
Qrr
21nC
Qoss
15nC
Vgs(th)
0.80V
l RoHs Compliant, Halogen Free
l Dual Common-Drain N-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on)
GG DD
SS
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SA
DirectFET®.
IRL6297SDPBF Datasheet
