IRL6297SDPBF
Overview
The IRL6297SDPbF combines the latest HEXFET® N-Channel Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
- 5nC Qgs2
- 4nC Qrr 21nC Qoss 15nC Vgs(th)
- 80V l RoHs Compliant, Halogen Free l Dual Common-Drain N-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) GG DD SS Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SA DirectFET® ISOMETRIC
