The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PD -96300
IRLH5036PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 4.5V)
60 5.5 44 1.2 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
• • • •
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Features and Benefits
Features
Low RDSon (< 5.5 mΩ @ Vgs = 4.5V ) Low Thermal Resistance to PCB (< 0.5°C/W) 100% Rg tested Low Profile (<0.