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IRLH5030PBF - Power MOSFET

Key Features

  • Low RDSon (≤9.0mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Numbe.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRLH5030PbF HEXFET® Power MOSFET V DS R DS(on) max (@VGS = 4.5V) 100 9.9 44 1.2 88 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) R G (typical) ID (@Tmb = 25°C) h Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features Low RDSon (≤9.0mΩ) Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.