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International Rectifier Electronic Components Datasheet

IRLH6224PBF Datasheet

Power MOSFET

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VDS
Vgs max
RDS(on) max
(@VGS = 4.5V)
(@VGS = 2.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
20
± 12
3.0
4.0
44
80i
V
V
mΩ
nC
A
Applications
Battery Protection Switch
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.4°C/W)
100% Rg tested
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRLH6224PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRLH6224TRPBF
IRLH6224TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
20
± 12
28
22
105hi
67h
80i
400
3.6
52
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1 www.irf.com © 2014 International Rectifier
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May 12, 2014


International Rectifier Electronic Components Datasheet

IRLH6224PBF Datasheet

Power MOSFET

No Preview Available !

IRLH6224PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
Δ ΒVDSS/Δ TJ
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Δ VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
gfs Forward Transconductance
Qg
Qg
Qgs1
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Qgs2
Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Q godr
Qsw
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Qoss
Output Charge
RG Gate Resistance
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min.
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
5.0
2.3
3.2
0.8
-4.2
–––
–––
–––
–––
–––
86
44
3.8
4.7
8.5
27
13
30
2.0
9.4
23
67
36
3710
1050
770
Max. Units
Conditions
––– V VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1.0mA
e3.0
e4.0
mΩ
VGS = 4.5V, ID = 20A
VGS = 2.5V, ID = 16A
1.1
–––
V
mV/°C
VDS
= VGS, ID = 50μA
1
150
100
-100
μA
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 12V
VGS = -12V
––– S VDS = 10V, ID = 20A
––– nC VGS = 10V, VDS = 15V, ID = 20A
–––
––– VDS = 10V
––– nC VGS = 4.5V
––– ID = 20A
–––
–––
––– nC VDS = 16V, VGS = 0V
––– Ω
––– VDD = 15V, VGS = 4.5V
–––
–––
ns
ID = 20A
RG=1.8Ω
–––
––– VGS = 0V
––– pF VDS = 10V
––– ƒ = 1.0MHz
Typ.
–––
–––
Max.
125
20
Units
mJ
A
Min. Typ. Max. Units
Conditions
––– ––– 67
––– –––
––– –––
––– 38
––– 82
400
1.2
57
125
MOSFET symbol
A
showing the
integral reverse
G
ep-n junction diode.
V TJ = 25°C, IS = 20A, VGS = 0V
ns TJ = 25°C, IF = 20A, VDD = 15V
nC di/dt = 300A/μs
Time is dominated by parasitic Inductance
D
S
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
Parameter
fJunction-to-Case
fJunction-to-Case
gJunction-to-Ambient
gJunction-to-Ambient
Typ.
–––
–––
–––
–––
Max.
2.4
34
35
22
Units
°C/W
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
May 12, 2014


Part Number IRLH6224PBF
Description Power MOSFET
Maker International Rectifier
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IRLH6224PBF Datasheet PDF





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International Rectifier





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