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VDS VGS RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
ID
(@Tc(Bottom) = 25°C)
20
V
±12
V
45
mΩ
62
mΩ
d 3.4
A
'
*
6
' )(7
' )(7
UPQÃWD@X
6
*
'
IRLHS6276PbF
HEXFET® Power MOSFET
D1
G2
S2
D1
D2
S1 G1 D2
2mm x 2mm Dual PQFN
Applications • Charge and discharge switch for battery application • Load/System Switch
Features and Benefits Features Low RDSon (≤ 45mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.