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IRLI640G Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.

Overview

Previous Datasheet Index Next Data Sheet PD - 9.1237 IRLI640G HEXFET® Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist.

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