IRLI640G mosfet equivalent, power mosfet.
a Sheet
IRLI640G
Peak Diode Recovery dv/dt Test Circuit
D.U.T Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Cu.
The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and extern.
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulati.
Image gallery
Download