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International Rectifier Electronic Components Datasheet

IRLML5203GPbF Datasheet

Power MOSFET

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l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
Description
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3TM,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
PD - 96166
IRLML5203GPbF
VDSS
-30V
HEXFET® Power MOSFET
RDS(on) max (mW)
98@VGS = -10V
165@VGS = -4.5V
ID
-3.0A
-2.6A
*
'
6
Micro3TM
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
100
Units
°C/W
1
07/22/08


International Rectifier Electronic Components Datasheet

IRLML5203GPbF Datasheet

Power MOSFET

No Preview Available !

IRLML5203GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
-30 ––– –––
––– 0.019 –––
––– ––– 98
––– ––– 165
-1.0 ––– -2.5
3.1 ––– –––
––– ––– -1.0
––– ––– -5.0
––– ––– -100
––– ––– 100
––– 9.5 14
––– 2.3 3.5
––– 1.6 2.4
––– 12 –––
––– 18 –––
––– 88 –––
––– 52 –––
––– 510 –––
––– 71 –––
––– 43 –––
Units
V
V/°C
m
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -3.0A ‚
VGS = -4.5V, ID = -2.6A ‚
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.0A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 70°C
VGS = -20V
VGS = 20V
ID = -3.0A
VDS = -24V
VGS = -10V ‚
VDD = -15V ‚
ID = -1.0A
RG = 6.0
VGS = -10V
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
17
12
Max.
-1.3
-24
-1.2
26
18
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on FR-4 board, t 5sec.
2 www.irf.com


Part Number IRLML5203GPbF
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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