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IRLML5203GPbF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.

Overview

l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l.

Key Features

  • lease refer to IR website at http://www. irf. com/package 8 www. irf. com IRLML5203GPbF Micro3™ Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) TR 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) FEED.

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