IRLML9301 Datasheet | International Rectifier

VDS VGS Max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) -30 ± 20 64 mΩ 103 mΩ - 96310C IRLML9301TRPb F HEXFET® Power MOSFET G1 3D S2 Micro3TM (SOT-23) IRLML9301TRPb F Application(s) - System/Load Switch Features and Benefits Features Low RDS(on) ( ≤ 64mΩ) Industry-standard pinout patible with existing Surface Mount Techniques Ro HS pliant containing no lead, no bromide and no halogen MSL1, Consumer qualification Benefits Lower switching losses Multi-vendor patibility results in Easier manufacturing ⇒ Environmentally friendly Increased reliability Symbol VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Symbol RθJA...