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IRLR2703PBF - Power MOSFET

Download the IRLR2703PBF datasheet PDF (IRLU2703PBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

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Note: The manufacturer provides a single datasheet file (IRLU2703PBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD- 95083A IRLR/U2703PbF l Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount (IRLR2703) l Straight Lead (IRLU2703) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.045Ω ID = 23A… S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.
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