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IRLU8113PBF - HEXFET Power MOSFET

This page provides the datasheet information for the IRLU8113PBF, a member of the IRLR8113PBF HEXFET Power MOSFET family.

Features

  • ludes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 16. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins.

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Full PDF Text Transcription

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PD - 95779A IRLR8113PbF IRLU8113PbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current HEXFET® Power MOSFET VDSS RDS(on) max 30V 6.0m: Qg 22nC D-Pak IRLR8113 I-Pak IRLU8113 Absolute Maximum Ratings www.DataSheet4U.com Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 94 67 Units V ™ f f A W 380 89 44 0.
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