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IRLZ24N - HEXFET POWER MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLZ24NL Power MOSFET
IRLZ24NLPBF Power MOSFET
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IRLZ24NSPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 91357C HEXFET® Power MOSFET l l l l l l IRLZ24N VDSS = 55V Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S RDS(on) = 0.06Ω ID = 18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation DataSheet4U.