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IRLZ24NS, IRLZ24NL Datasheet - International Rectifier

IRLZ24NS Power MOSFET

l HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.06Ω G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

IRLZ24NS Features

* >

* dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD et4U.com DataShee DataSheet4U.com Driver Gate Drive P.W. Period D= P.W. Period VGS=10V

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward

IRLZ24NS, IRLZ24NL Datasheet

This datasheet PDF includes multiple part numbers: IRLZ24NS, IRLZ24NL. Please refer to the document for exact specifications by model.
IRLZ24NS Datasheet Preview Page 2 IRLZ24NS Datasheet Preview Page 3

Datasheet Details

Part number:

IRLZ24NS, IRLZ24NL

Manufacturer:

International Rectifier

File Size:

372.89 KB

Description:

Power mosfet.

This datasheet PDF includes multiple part numbers: IRLZ24NS, IRLZ24NL.
Please refer to the document for exact specifications by model.

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IRLZ24NS IRLZ24NL Power MOSFET International Rectifier

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