Datasheet4U Logo Datasheet4U.com

IRLZ24NSPBF - Power MOSFET

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLZ24NS N-Channel MOSFET INCHANGE
IRLZ24N N-Channel MOSFET INCHANGE
IRLZ24 N-Channel MOSFET Samsung Electronics
IRLZ24 Power MOSFET Vishay
IRLZ24A Advanced Power MOSFET Samsung Electronics

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLZ24NS Power MOSFET
IRLZ24N HEXFET POWER MOSFET
IRLZ24NL Power MOSFET
IRLZ24NLPBF Power MOSFET
IRLZ24NPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D IRLZ24NSPbF IRLZ24NLPbF VDSS = 55V RDS(on) = 0.06Ω PD - 95584 G ID = 18A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.