JANSR2N7269U Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology.

Datasheet Details

Part number	JANSR2N7269U
Manufacturer	International Rectifier (now Infineon)
File Size	1.39 MB
Description	Radiation Hardened Power MOSFET
Datasheet	JANSR2N7269U-InternationalRectifier.pdf

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

Single event effect (SEE) hardened.
Low RDS(on).
Low total gate charge.
Simple drive requirements.
Hermetically sealed.
Electrically isolated.
Ceramic eyelets.
Light weight.
Surface Mount.
ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary.
BVDSS: 200V.
ID : 26A.
RDS(on),max : 100m (100 krad(Si)).
QG,max : 170nC.
REF: MIL-PRF-19500/603 Potentia.

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