JANSR2N7550U2 Datasheet | International Rectifier

Description IR Hi Rel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (Me V/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. . Features - Single Event Effect (SEE) Hardened - Ultra Low RDS(on) - Low Total Gate Charge - Simple Drive...