* Single event effect (SEE) hardened (up to LET of 90.5 MeV
* cm2/mg)
* Low RDS(on)
* Improved SOA for linear mode operation
* Fast switching
* Low total gate charge
* Simple drive requirements
* Hermetically sealed
* Electrically iso
JANSR2N7666T1 Datasheet (519.89 KB)
JANSR2N7666T1
International Rectifier
519.89 KB
Radiation hardened power mosfet.
IRHMS9A97260 (JANSR2N7666T1) PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Techno.
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