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JANSR2N7626UB - Power MOSFET

General Description

IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.

The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.

Key Features

  • 5V CMOS and TTL compatible.
  • Single event effect (SEE) hardened.
  • Fast switching.
  • Low total gate charge.
  • Simple drive requirements.
  • Hermetically sealed.
  • Light weight.
  • Surface mount.
  • ESD rating: Class 0B per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: -60V.
  • ID : -0.53A.
  • RDS(on), max : 1.4.
  • QG, max: 3.6nC.
  • REF: MIL-PRF-19500/745 Potential.

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📁 Similar Datasheet

Part Number Description Manufacturer
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JANSR2N7278 4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFET Intersil Corporation
JANSR2N7281 Radiation Hardened/ N-Channel Power MOSFET Intersil Corporation
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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANSR2N7624U3 P-CHANNEL POWER MOSFET
JANSR2N7624U3CE Radiation Hardened Logic level Power MOSFET
JANSR2N7616UB N-CHANNEL POWER MOSFET
JANSR2N7647U3CE Radiation Hardened Power MOSFET
JANSR2N7648U3C N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRHLUB7970Z4 (JANSR2N7626UB) PD-94764P Radiation Hardened Logic Level Power MOSFET Surface Mount (UB) -60V, -0.53A, P-channel, R7 Technology Features  5V CMOS and TTL compatible  Single event effect (SEE) hardened  Fast switching  Low total gate charge  Simple drive requirements  Hermetically sealed  Light weight  Surface mount  ESD rating: Class 0B per MIL-STD-750, Method 1020 Product Summary  BVDSS: -60V  ID : -0.53A  RDS(on), max : 1.4  QG, max: 3.