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JANTXV2N7224U Datasheet POWER MOSFET

Manufacturer: International Rectifier (now Infineon)

Download the JANTXV2N7224U datasheet PDF. This datasheet also includes the JANTX2N7224U variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (JANTX2N7224U-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

PD - 91547C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN150 0.07 Ω ID 34A IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state resistance combined with high transconductance.

HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.

Key Features

  • n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Surface Mount n Dynamic dv/dt Rating n Light-weight Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche.

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