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JANTXV2N7227U - POWER MOSFET

Download the JANTXV2N7227U datasheet PDF. This datasheet also covers the JANTX2N7227U variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Electrically Isolated n Surface Mount n Dynamic dv/dt Rating n Light-weight Absolute Maximum Ratings ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (JANTX2N7227U-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
JANTXV2N7221U POWER MOSFET
JANTXV2N7222 POWER MOSFET
JANTXV2N7224 Transistor
JANTXV2N7224U POWER MOSFET
JANTXV2N7225 POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 91551C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN350 0.315 Ω ID 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.