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International Rectifier Electronic Components Datasheet

MBR1100 Datasheet

SCHOTTKY BARRIER RECTIFIER

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Bulletin PD-20587 rev. B 03/03
SCHOTTKY RECTIFIER
MBR1100
1.0 Amp
Major Ratings and Characteristics
Characteristics
IF(AV) Rectangular
waveform
VRRM
IFSM @ tp = 5 µs sine
MBR1100 Units
1.0 A
100 V
200 A
VF @ 1 Apk, TJ = 125°C
0.68
TJ range
- 40 to 150
V
°C
Description/ Features
The MBR1100 axial leaded Schottky rectifier has been optimized
for very low forward voltage drop, with moderate leakage. Typical
applications are in switching power supplies, converters, free-
wheeling diodes, and reverse battery protection.
Low profile, axial leaded outline
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
CASE STYLE AND DIMENSIONS
www.irf.com
Conform to JEDEC Outline DO-204AL (DO-41)
Dimensions in millimeters and inches
1


International Rectifier Electronic Components Datasheet

MBR1100 Datasheet

SCHOTTKY BARRIER RECTIFIER

No Preview Available !

MBR1100
Bulletin PD-20587 rev. B 03/03
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
MBR1100
100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current
* See Fig. 4
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
EAS Non-Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
Value
10
200
50
1.0
0.5
Units
Conditions
A 50% duty cycle @ TC = 85°C, rectangular wave form
5µs Sine or 3µs Rect. pulse Following any rated
A load condition and with
10ms Sine or 6ms Rect. pulse rated VRRM applied
mJ TJ = 25 °C, IAS = 0.5 Amps, L = 8 mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. VA = 1.5 x VR typical
Electrical Specifications
Parameters
VFM Max. Forward Voltage Drop
* See Fig. 1
(1)
IRM Max. Reverse Leakage Current
* See Fig. 2
(1)
CT Typical Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
Value
0.85
0.96
0.68
0.78
0.5
1.0
35
8.0
10000
Units
Conditions
V @ 1A
V @ 2A
V @ 1A
V @ 2A
TJ = 25 °C
TJ = 125 °C
mA
mA
T J = 25 °C
T J = 125 °C
VR = rated VR
pF V R = 5VDC, (test signal range 100Khz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/ µs (Rated VR)
Thermal-Mechanical Specifications
Parameters
Value Units
Conditions
TJ Max. Junction Temperature Range(*)
Tstg Max. Storage Temperature Range
RthJL Max. Thermal Resistance Junction
to Lead
(**)
-40 to 150
-40 to 150
80
°C
°C
°C/W DC operation (* See Fig. 4)
wt Approximate Weight
0.33(0.012) g (oz.)
Case Style
DO-204AL(DO-41)
(*) dPtot
1
< thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from Package
2 www.irf.com


Part Number MBR1100
Description SCHOTTKY BARRIER RECTIFIER
Maker International Rectifier
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MBR1100 Datasheet PDF






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