MBR1100
Overview
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Guard-Ring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- High Surge Capacity
- These Devices are Pb-Free and are RoHS Compliant Mechanical Characteristics:
- Case: Epoxy, Molded
