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MBR1100
Axial Lead Rectifier
These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
• Low Reverse Current • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Guard−Ring for Stress Protection • Low Forward Voltage • 175°C Operating Junction Temperature • High Surge Capacity • These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded • Weight: 0.
MBR1100 Datasheet
