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MBR1100 Datasheet Axial Lead Rectifier

Manufacturer: onsemi

Overview: DATA SHEET .onsemi. Axial Lead Rectifier MBR1100 These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode.

MBR1100 datasheet preview

Datasheet Details

Part number	MBR1100
Manufacturer	onsemi
File Size	171.12 KB
Description	Axial Lead Rectifier
Datasheet	MBR1100_ONSemiconductor.pdf

Key Features

epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low.
voltage, high.
frequency inverters, free wheeling diodes, and polarity protection diodes. Features.
Low Reverse Current.
Low Stored Charge, Majority Carrier Conduction.
Low Power Loss/High Efficiency.
Highly Stable Oxide Passivated Junction.
Guard.
Ring for Stress Protection.
Low Forward Voltage.
175C Operating Junction Tem.

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	MBR1100	Power Schottky Rectifier	SIRECT
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