| Part Number | MBR1100 Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
Features
• Low power loss, high efficiency
Schottky Barrier Diode
MBR1100 MBR1100S
Mechanical Data
• Case: SOD-123, SOD-323 • Molding compound: UL flammability classification rating 94V-0
• Terminal.
* Low power loss, high efficiency Schottky Barrier Diode MBR1100 MBR1100S Mechanical Data * Case: SOD-123, SOD-323 * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOD-123 SOD-323 Ordering Information Part Number. |
MBR1100 Datasheet and Specifications PDF
The MBR1100 is a Schottky Barrier Diode.
| Part Number | MBR1100 Datasheet |
|---|---|
| Description | Axial Lead Rectifier |
| Manufacturer | onsemi |
| Overview |
DATA SHEET
Axial Lead Rectifier
MBR1100
These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxi.
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low *voltage, high *frequency inverters, free wheeling diodes, and polarity protection diodes. Features * Low Reverse Current * Low Stored Charge, Majority Carrier Conduction * Low Power Lo. |
| Part Number | MBR1100 Datasheet |
|---|---|
| Description | SCHOTTKY BARRIER RECTIFIER |
| Manufacturer | International Rectifier |
| Overview | Features The MBR1100 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, fre. The MBR1100 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Low profile, axial leaded outline High purity, high temperat. |
| Part Number | MBR1100 Datasheet |
|---|---|
| Description | SCHOTTKY BARRIER RECTIFIER |
| Manufacturer | Shanghai SIM-BCD Semiconductor |
| Overview | 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes. Size Thickness (Min) Thickness (Max) µ m 1040 880 203 254 Mil 40.94 34.64 8.00 10.00 A PS: (1)Cutting street width is around 16µ m (0.62mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag. C . |