MBR1100
Overview
V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM IFAV VF MAX TYPE: MBR1100 (RSingle ¡õ Dual) Anode Spec. Limit 100 1 0.755 0.725 Die Sort 107 UNIT Volt Amp Volt IR MAX Cj MAX IFSM Tj TSTG 0.015 0.010 mA pF 52 -50 to +150 -50 to +150 Amp ¡æ ¡æ Specification apply to die only.
