MBR1100 - SCHOTTKY BARRIER RECTIFIER

Shanghai SIM-BCD Semiconductor

Download the MBR1100 datasheet PDF. This datasheet also covers the MBR1100_ShanghaiSIM variant, as both devices belong to the same schottky barrier rectifier family and are provided as variant models within a single manufacturer datasheet.

General Description

100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @

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MBR1100 schottky barrier rectifier by Shanghai SIM-BCD Semiconductor - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MBR1100_ShanghaiSIM-BCDSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MBR1100
Manufacturer	Shanghai SIM-BCD Semiconductor
File Size	25.75 KB
Description	SCHOTTKY BARRIER RECTIFIER
Datasheet	MBR1100 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR 1100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM IFAV VF MAX TYPE: MBR1100 (RSingle ¡õ Dual) Anode Spec. Limit 100 1 0.755 0.725 Die Sort 107 UNIT Volt Amp Volt IR MAX Cj MAX IFSM Tj TSTG 0.015 0.010 mA pF 52 -50 to +150 -50 to +150 Amp ¡æ ¡æ Specification apply to die only. Actual performance may degrade when assembled.