MBR1100 - SCHOTTKY BARRIER RECTIFIER

This page provides the datasheet information for the MBR1100, a member of the MBR1100_ShanghaiSIM SCHOTTKY BARRIER RECTIFIER family.

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Shanghai SIM-BCD Semiconductor

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Datasheet Details

Part number	MBR1100
Manufacturer	Shanghai SIM-BCD Semiconductor
File Size	25.75 KB
Description	SCHOTTKY BARRIER RECTIFIER
Datasheet	MBR1100 Datasheet
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MBR1100 Product details

Description

100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @

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Published: Oct 20, 2005 |