MBR1100TG Datasheet | American First Semiconductor

Features - Plastic package has Underwriters Laboratory Flammability Classification 94V-0 - Metal silicon junction, majority carrier conduction - Low power loss, high efficiency - High current capability, Low forward voltage drop - High surge capability - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications - High temperature soldering guaranteed: 260 C/10 seconds at terminals - ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC Mechanical data - Case: R-1 molded plastic body - Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 - Polarity: Color band denotes cathode end - Mounting Position: Any - Weight: 0.007 ounce, 0.20 gram R-1 0.102(2.6) 0.091(2.3) DIA. 0.787(20.0) MIN. 0.126(3.2) 0.106(2.7) 0.025(0.65) 0.021(0.55) DIA. 0.787(20.0) MIN. Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics - Ratings at 25 C ambient temperature unless otherwise specified. - Single phase, half wave, resistive or inductive load. - For capacitive load derate by 20%. Type Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375"(9.5mm) lead length(see Fig. 1 ) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 1.0 A(Note 1 ) Maximum instantaneous reverse current at rated DC blocking voltage(Note 1) TA =25 C TA =100 C Typical junction capacitance(Note...