RF3808S - Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)

Product Overview

International Rectifier

Datasheet Details

Part number	RF3808S
Manufacturer	International Rectifier
File Size	161.58 KB
Description	Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Datasheet	RF3808S Datasheet
Additional preview pages of the RF3808S datasheet.

Product details

Description

Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

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Published: Apr 16, 2005 |