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International Rectifier Electronic Components Datasheet

RF3808S Datasheet

Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)

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PD - 94338A
IRF3808S
AUTOMOTIVE MOSFET
Typical Applications
q Integrated Starter Alternator
q 42 Volts Automotive Electrical Systems
Benefits
q Advanced Process Technology
q Ultra Low On-Resistance
q Dynamic dv/dt Rating
q 175°C Operating Temperature
q Fast Switching
q Repetitive Avalanche Allowed up to Tjmax
G
IRF3808L
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 0.007
ID = 106AV
S
Description
Designed specifically for Automotive applications, this Advanced
Planar Stripe HEXFET ® Power MOSFET utilizes the latest pro-
cessing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this HEXFET power MOSFET
are a 175°C junction operating temperature, low RθJC, fast switch-
ing speed and improved repetitive avalanche rating. This combina-
tion makes the design an extremely efficient and reliable choice for
use in higher power Automotive electronic systems and a wide
variety of other applications.
D2Pak
IRF3808S
TO-262
IRF3808L
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Q
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche EnergyR
Avalanche CurrentQ
Repetitive Avalanche EnergyW
Peak Diode Recovery dv/dt S
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
106V
75V
550
200
1.3
± 20
430
82
See Fig.12a, 12b, 15, 16
5.5
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted, Steady State)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET(R) is a registered trademark of International Rectifier.
www.irf.com
1
03/08/02


International Rectifier Electronic Components Datasheet

RF3808S Datasheet

Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)

No Preview Available !

IRF3808S/IRF3808L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance U
75 ––– –––
––– 0.086 –––
––– 5.9 7.0
2.0 ––– 4.0
100 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 150 220
––– 31 47
––– 50 76
––– 16 –––
––– 140 –––
––– 68 –––
––– 120 –––
––– 4.5 –––
––– 7.5 –––
––– 5310 –––
––– 890 –––
––– 130 –––
––– 6010 –––
––– 570 –––
––– 1140 –––
V
V/°C
m
V
S
µA
nA
nC
ns
nH
pF
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 82A T
VDS = 10V, ID = 250µA
VDS = 25V, ID = 82A
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 82A
VDS = 60V
VGS = 10VT
VDD = 38V
ID = 82A
RG = 2.5
VGS = 10V T
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 60V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) Q
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Notes:
Q Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
R Starting TJ = 25°C, L = 0.130mH
RG = 25, IAS = 82A. (See Figure 12).
S ISD 82A, di/dt 310A/µs, VDD V(BR)DSS,
TJ 175°C
T Pulse width 400µs; duty cycle 2%.
2
Min. Typ. Max. Units
Conditions
––– ––– 106V
––– ––– 550
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 82A, VGS = 0VT
––– 93 140 ns TJ = 25°C, IF = 82A
––– 340 510 nC di/dt = 100A/µsT
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
U Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
V Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
W Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
www.irf.com


Part Number RF3808S
Description Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Maker International Rectifier
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RF3808S Datasheet PDF






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International Rectifier





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