RIC7S113E4 - RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Datasheet Summary

Description

The RIC7S113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Logic inputs are compatible with standard CMOS or LSTTL outputs.

Features

Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V.

International Rectifier

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Datasheet Details

Part number	RIC7S113E4
Manufacturer	International Rectifier
File Size	214.70 KB
Description	RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Datasheet	RIC7S113E4 Datasheet
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PD-97827 RIC7S113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V VOFFSET IO+/- 400V max. 2A / 2A n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels VOUT ton/off (typ.) Delay Matching(typ.

Published: Mar 4, 2016 |