RIC7S113E4
Description
The RIC7S113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.
Key Features
- Total dose capability to 100 kRads(Si)
- Floating channel designed for bootstrap operation
- Fully operational to +400V VOFFSET IO+/- 400V max. 2A / 2A
- Tolerant to negative transient voltage n dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels VOUT ton/off (typ.) Delay Matching(typ.) 10 - 20V 120 & 100 ns 5 ns
- Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
