RIC7S113E4 driver equivalent, radiation hardened high and low side gate driver.
Product Summary
n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V
VOFFSET IO+/-
400V max. 2A /.
The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operat.
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