RIC7S113
Description
RIC7S113 is a rad hard high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Key Features
- Independent high and low side gate driver
- Independent bias supply for logic and power with ±5V offset
- Wide bias supply voltage range
- Undervoltage lockout for both channels
- CMOS Schmitt trigger inputs with internal pull-down resistor
- Integrated level shift for high side drive
- Cycle by cycle edge triggered shutdown logic pin
- Matched propagation delay for both channels
- Hermetically sealed package
- Total ionizing dose (TID) hardness o High dose rate (50-300 rad(Si)/s) of 100 krad(Si)
