RIC7S113E4 - RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

International Rectifier (now Infineon)

General Description

The RIC7S113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Logic inputs are compatible with standard CMOS or LSTTL outputs.

Key Features

Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V.

📥 Download Datasheet

RIC7S113E4 radiation hardened high and low side gate driver by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	RIC7S113E4
Manufacturer	International Rectifier (now Infineon)
File Size	214.70 KB
Description	RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
Datasheet	RIC7S113E4 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
RIC7S113	Radiation hardened high and low side gate driver
RIC7S113A4	RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7S113L4	RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7113A4	RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER
RIC7113E4	RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

PD-97827 RIC7S113E4 RADIATION HARDENED HIGH AND LOW SIDE GATE DRIVER Features Product Summary n Total dose capability to 100 kRads(Si) n Floating channel designed for bootstrap operation n Fully operational to +400V VOFFSET IO+/- 400V max. 2A / 2A n Tolerant to negative transient voltage n dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels VOUT ton/off (typ.) Delay Matching(typ.