RIC7S113E4
Description
The RIC7S113E4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
Key Features
- Product Summary
- Total dose capability to 100 kRads(Si)
- Floating channel designed for bootstrap operation
- Fully operational to +400V VOFFSET IO+/- 400V max. 2A / 2A
- Tolerant to negative transient voltage n dV/dt immune
- Gate drive supply range from 10 to 20V
- Undervoltage lockout for both channels VOUT ton/off (typ.) Delay Matching(typ.) 10 - 20V 120 & 100 ns 5 ns
- Separate logic supply range from 5 to 20V Logic and power ground ±5V offset
- CMOS Schmitt-triggered inputs with pull-down
- Cycle by cycle edge-triggered shutdown logic
