Si4410DY
Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800m W in typical board mount applications.
HEXFET® Power MOSFET
VDSS = 30V
5 D RDS(on) = 0.0135Ω
Top View
SO-8
Absolute Maximum Ratings
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dv/dt EAS VGS TJ, TSTG
Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
- Power Dissipation
- Linear Derating Factor Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy- Gate-to-Source Voltage Junction and Storage Temperature...
