Si4410DY Key Features
- N-Channel MOSFET
- Low On-Resistance S
- Low Gate Charge
- Surface Mount S
- Part: Si4410DY
- Manufacturer: International Rectifier (official site)
- Size: 88.75 KB
Other Si4410DY Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
SI4410DY | N-channel FET |
Fairchild |
Si4410DY | Single N-Channel MOSFET |
Vishay |
Si4410DY | N-Channel MOSFET |
Kexin Semiconductor |
SI4410DY | N-Channel MOSFET |
Vishay |
SI4410BDY | N-Channel MOSFET |
Si4410DY Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical...