Si4410DYPbF Overview
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical...
Si4410DYPbF Key Features
- Low On-Resistance
- Low Gate Charge
- Surface Mount
- Logic Level Drive
