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l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free
Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
PD - 95168
Si4410DYPbF
HEXFET® Power MOSFET
S1 S2 S3 G4
AA 8D 7D
VDSS = 30V
6D
5 D RDS(on) = 0.
Si4410DYPbF Datasheet
