Datasheet Details
| Part number | Si4410DYPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 115.45 KB |
| Description | Power MOSFET |
| Datasheet | Si4410DYPbF-InternationalRectifier.pdf |
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Overview: l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l.
| Part number | Si4410DYPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 115.45 KB |
| Description | Power MOSFET |
| Datasheet | Si4410DYPbF-InternationalRectifier.pdf |
|
|
|
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.
The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
PD - 95168 Si4410DYPbF HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D VDSS = 30V 6D 5 D RDS(on) = 0.0135Ω Top View SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dv/dt EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambient Max.
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