Si4410DY Overview
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical...
Si4410DY Key Features
- N-Channel MOSFET
- Low On-Resistance S
- Low Gate Charge
- Surface Mount S
