Si4410DY Datasheet | International Rectifier

- 91853C Si4410DY l N-Channel MOSFET l Low On-Resistance S l Low Gate Charge l Surface Mount S l Logic Level Drive Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. HEXFET® Power MOSFET VDSS = 30V 5 D RDS(on) = 0.0135Ω Top...