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Si4410DY Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 91853C Si4410DY l N-Channel MOSFET l Low On-Resistance S l Low Gate Charge l Surface Mount S l Logic Level Drive S.

General Description

This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology.

The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.

HEXFET® Power MOSFET AA 1 8 D VDSS = 30V 2 7 D 3 6 D 4 5 D RDS(on) = 0.0135Ω Top View SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dv/dt EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Peak Diode Recovery dv/dt … Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambientƒ Max.

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