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PD - 91853C
Si4410DY
l N-Channel MOSFET
l Low On-Resistance S
l Low Gate Charge
l Surface Mount
S
l Logic Level Drive
S
G
Description
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications
The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications.
HEXFET® Power MOSFET
AA
1
8
D
VDSS = 30V
2
7
D
3
6
D
4
5 D RDS(on) = 0.
Si4410DY Datasheet
