| Part Number | Si4410DY |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this.
r Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy * Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA www.irf.com Parameter Maximum Junction-to-Ambient * Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20 -55 to + 150 Max. 50 Units V A W W/°C V/ns mJ V °C. |