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Si4410DY
N-channel enhancement mode field-effect transistor
M3D315
Rev. 02 — 05 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4410DY in SOT96-1 (SO8).
2. Features
s Low on-state resistance s Fast switching s TrenchMOS™ technology.
3. Applications
s s s s s DC to DC convertors DC motor control Lithium ion battery applications Notebook PC Portable equipment applications.
c c
4. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s)
8 5 d
Simplified outline
Symbol
gate (g) drain (d)
1 Top view 4
MBK187
g s
MBB076
SOT96-1 (SO8)
1.
TrenchMOS is a trademark of Royal Philips Electronics.
SI4410DY Datasheet
