Datasheet Summary
N-channel enhancement mode field-effect transistor
M3D315
Rev. 02
- 05 July 2001
Product data
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4410DY in SOT96-1 (SO8).
2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology.
3. Applications s s s s s DC to DC convertors DC motor control Lithium ion battery applications Notebook PC Portable equipment applications. c c
4. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 Pinning
- SOT96-1, simplified outline and symbol Description source (s)
8 5 d
Simplified outline
Symbol gate (g) drain (d)
1 Top view 4
MBK187 g...