Si4410DYPbF Datasheet | International Rectifier

Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low onresistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800m W in typical board mount applications. - 95168 Si4410DYPb F HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D VDSS = 30V 6D 5 D RDS(on) = 0.0135Ω Top View SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dv/dt EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation - Power Dissipation - Linear Derating Factor Peak Diode Recovery dv/dt … Single Pulse Avalanche Energy- Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance RθJA .irf. Parameter Maximum Junction-to-Ambient- Max. 30 ±10 ±8.0 ±50 2.5 1.6 0.02 5.0 400 ± 20 -55 to + 150 Max. 50 Units V W W/°C V/ns m J V °C Units °C/W 09/22/04 Si4410DYPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown...