FRM234H mosfet equivalent, n-channel power mosfet.
* 7A, 250V, RDS(on) = 0.70Ω
* Second Generation Rad Hard MOSFET Results From New Design Concepts
* Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End.
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K R.
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