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HCTS20MS - Radiation Hardened Dual 4-Input NAND Gate

General Description

The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate.

A low on any input forces the output to a High state.

The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • Dose Rate Survivability: >1 x 1012 RAD (Si)/s.
  • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Opera.

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Full PDF Text Transcription for HCTS20MS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HCTS20MS. For precise diagrams, and layout, please refer to the original PDF.

TM HCTS20MS September 1995 Radiation Hardened Dual 4-Input NAND Gate Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Ups...

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ardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 RAD (Si)/s • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH Description The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on a

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