HCTS20MS gate equivalent, radiation hardened dual 4-input nand gate.
* 3 Micron Radiation Hardened SOS CMOS
* Total Dose 200K RAD (Si)
* SEP Effective LET No Upsets: >100 MEV-cm2/mg
* Single Event Upset (SEU) Immunity < 2 x.
The Intersil HCTS20MS is a Radiation Hardened Dual 4-Input NAND Gate. A low on any input forces the output to a High state. The HCTS20MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation harde.
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