HS-303AEH Overview
Datasheet HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH Radiation Hardened CMOS Dual SPDT Analog Switch The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog switches are monolithic devices fabricated using the Renesas dielectrically isolated Radiation Hardened Silicon Gate (RSG) process technology to ensure latch-up free operation. They are pinout patible and functionally equivalent to the HS-303RH, but offer improved...
HS-303AEH Key Features
- QML, per MIL-PRF-38535
- Radiation performance ○ Total dose: 3x105rad(Si) ○ SEE: For LET = 60MeV-cm2/mg at 60° incident angle, <150pC charge tran
- No latch-up, dielectrically isolated device islands
- Pinout and functionally patible with Renesas HS-303RH and HI-303 series analog switches
- Analog signal range equal to the supply voltage range
- Low leakage: 100nA (max, post-rad)
- Low rON: 70Ω (max, post-rad)
- Low standby supply current: +150µA/-100µA
