Overview: HS-4080AEH
Radiation Hardened Full Bridge N-Channel FET Driver DATASHEET The HS-4080AEH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver IC. The device includes a TTL-level input parator, which can be used to facilitate the “hysteresis” and PWM modes of operation. Its HEN (High Enable) lead can force current to freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off. The HS-4080AEH is well suited for use in distributed DC power supplies and DC/DC converters, since it can switch at high frequencies.
This device can also drive medium voltage motors and two HS-4080AEHs can be used to drive high performance stepper motors, since the short minimum “on-time” can provide fine micro-stepping capability.
Short propagation delays maximize control loop crossover frequencies and dead times, which can be adjusted to near zero to minimize distortion, resulting in precise control of the driven load.
Constructed with the Renesas dielectrically isolated radiation hardened Silicon Gate (RSG) process, this device is immune to single event latch-up and has been specifically designed to provide highly reliable performance in harsh radiation environments. plete your design with radiation hardened MOSFETs from Renesas.
