ACS174MS Datasheet | Intersil

Features - QML Qualified Per MIL-PRF-38535 Requirements - 1.25 Micron Radiation Hardened SOS CMOS - Radiation Environment - Latch-Up Free Under Any Conditions - Total Dose (Max.) - - - . . 3 x 105 RAD(Si) - SEU Immunity - - . . . <1 x 10-10 Errors/Bit/Day - SEU LET Threshold - - . . >100Me V/(mg/cm2) - Input Logic Levels. . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC) - Output Current - - - - - . ±12m A (Min) - Quiescent Supply Current - - - 10µA (Max) - Propagation Delay - - - - . . 23ns (Max) Applications - High Speed Control Circuits - Sensor Monitoring - Low Power Designs Ordering Information ORDERING NUMBER 5962F9863401VCC ACS174D/SAMPLE-03 5962F9863401VXC ACS174K/SAMPLE-03 5962F9863401V9A INTERNAL MARKETING NUMBER ACS174DMSR-03 ACS174D/SAMPLE-03 ACS174KMSR-03 ACS174K/SAMPLE-03 ACS174HMSR-03 TEMP. RANGE (o C) -55 to 125 25 -55 to 125 25 25 PACKAGE 16 Ld SBDIP 16 Ld SBDIP 16 Ld Flatpack 16 Ld Flatpack Die DESIGNATOR CDIP2-T16 CDIP2-T16 CDFP4-F16 CDFP4-F16 NA Pinouts ACS174MS (SBDIP) TOP VIEW MR 1 Q0 2 D0 3 D1 4 Q1 5 D2 6 Q2 7 GND 8 16 VCC 15 Q5 14 D5 13 D4 12 Q4 11 D3 10 Q3 9 CP MR Q0 D0 D1 Q1 D2 Q2 GND ACS174MS (FLATPACK) TOP VIEW 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC Q5 D5 D4 Q4 D3 Q3 CP CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 ACS174MS Die Characteristics DIE DIMENSIONS: Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ±25µm (20.6 mils ±1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils) METALLIZATION: AI Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm SUBSTRATE...