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Intersil Electronic Components Datasheet

G20N60B3 Datasheet

N-Channel IGBT

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Data Sheet
HGT1S20N60B3S, HGTP20N60B3,
HGTG20N60B3
January 2000 File Number 3723.6
40A, 600V, UFS Series N-Channel IGBTs
The HGT1S20N60B3S, the HGTP20N60B3 and the
HGTG20N60B3 are Generation III MOS gated high voltage
switching devices combining the best features of MOSFETs
and bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTP20N60B3
TO-220AB
G20N60B3
HGT1S20N60B3S
TO-263AB
G20N60B3
HGTG20N60B3
TO-247
HG20N60B3
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S20N60B3S9A.
Symbol
C
G
E
Features
• 40A, 600V at TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oC
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-263AB
G
E
COLLECTOR
(FLANGE)
JEDEC TO-220AB (ALTERNATE VERSION)
EC
G
COLLECTOR
(FLANGE)
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000


Intersil Electronic Components Datasheet

G20N60B3 Datasheet

N-Channel IGBT

No Preview Available !

HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector to Gate Voltage, RGE = 1M. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TC = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
HGT1S20N60B3S
HGTP20N60B3
HGTG20N60B3
600
600
40
20
160
±20
±30
30A at 600V
165
1.32
-40 to 150
300
260
4
10
UNITS
V
V
A
A
A
V
V
W
W/oC
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE = 360V, TC = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250µA, VGE = 0V
VCE = BVCES
IC = IC110, VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TC = 150oC, VGE =
15V, RG = 10Ω, L =
45µH
VCE = 480V
VCE = 600V
600 - - V
- - 250 µA
- - 1.0 mA
- 1.8 2.0 V
- 2.1 2.5 V
3.0 5.0 6.0
V
-
-
±100
nA
100 - - A
30 - - A
Gate to Emitter Plateau Voltage
VGEP
IC = IC110, VCE = 0.5 BVCES
- 8.0 -
V
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
QG(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
RθJC
IC = IC110,
VCE = 0.5 BVCES
TC = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 10
L = 100µH
VGE = 15V
VGE = 20V
- 80 105 nC
-
105 135
nC
- 25 - ns
- 20 - ns
-
220 275
ns
-
140 175
ns
- 475 -
µJ
- 1050 -
µJ
- - 0.76 oC/W
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGT1S20N60B3S, HGTP20N60B3 and HGTG20N60B3 were tested per
JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-
Off Energy Loss. Turn-On losses include diode losses.
2


Part Number G20N60B3
Description N-Channel IGBT
Maker Intersil Corporation
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G20N60B3 Datasheet PDF






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