G20N60C3D Datasheet PDF (N-Channel IGBT) | Download Intersil (now Renesas) G20N60C3D

Part number	G20N60C3D
Manufacturer	Intersil (now Renesas)
File Size	81.19 KB
Description	N-Channel IGBT
Datasheet	G20N60C3D Datasheet

Overview

HGTG20N60C3D Data Sheet January 2000 File Number 4494.2 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the.

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063). The IGBT is ideal for many high voltage switching.

Part Number	Description
G20N60B3	N-Channel IGBT
G20N100D2	HGTG20N100D2

G20N60C3D - N-Channel IGBT

Datasheet Details

Overview

Key Features

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