* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49051. The diode used in a
G30N60C3D Datasheet (153.77 KB)
G30N60C3D
Intersil Corporation
153.77 KB
N-channel igbt.
www.DataSheet4U.com HGTG30N60C3D Data Sheet January 2000 File Number 4041.2 63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes.
📁 Related Datasheet
G30N60A4D SMPS Series N-Channel IGBT (Fairchild Semiconductor)
G30N60B3 NPT IGBT (Fairchild Semiconductor)
G30N60B3D N-Channel IGBT (Fairchild Semiconductor)
G30N60HS High Speed IGBT (Infineon)
G30N02 N-Channel MOSFET (GOFORD)
G30N03 N-Channel Trench MOSFET (GOFORD)
G30N03D3 N-Channel Trench MOSFET (GOFORD)
G30N04 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G30N04D3 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G30 Voltage-Controlled Attenuator Module (MACOM)
